A study of the electrical and optical characteristics of layer-by-layer devices fabricated from colloidal nanoparticles | |
| Author | Abid, Muhammad Irfan |
| Call Number | AIT Thesis no.ME-08-01 |
| Subject(s) | Nanoparticles Nanotechnology Surface plasmon resonance |
| Note | A thesis submitted in partial fulfillment of the requirements for the degree of Master of Engineering in Microelectronics, School of Engineering and Technology |
| Publisher | Asian Institute of Technology |
| Series Statement | Thesis ; no. ME-08-01 |
| Abstract | The devices fabricated by self organization of nanoparticles show very interesting properties which can be controlled by precisely changing the structure of layer stacks and properties of the materials used. In this thesis we have fabricated multilayers by layer-by-layer self assembly process using colloidal Au (~20nm) and ZnS (~30nm) nanoparticles. A remarkable improvement in the electrical and optical properties of deposited layers is observed by controlling the pH of the colloidal solutions and deposited films using buffer solutions during the assembly process. From Scanning Electron Microscopy it was observed that an improvement in thickness of deposited layers from 0.5 to 1.25 μm is achieved for 75 layered devices after using the pH controlled processes. The dc onset voltage for 10 to 150 layered devices was found to increase linearly from ~0.5 to ~3.5 V with a corresponding decrease in leakage current from ~26 to ~0.03 μA. The similarity between the onset voltage and current values of different sized array structures suggests that conduction through these devices takes place through the formation of electron channels across the devices and is independent of the device area. Less than ±6% variation in current voltage characteristics of different cells fabricated on the same array devices indicates that the process is fairly uniform within the experimental limitations. The possibility of fabricating array devices has opened new horizons to find practical applications of these devices in future microelectronic circuits. |
| Year | 2008 |
| Corresponding Series Added Entry | Asian Institute of Technology. Thesis ; no. ME-08-01 |
| Type | Thesis |
| School | School of Engineering and Technology (SET) |
| Department | Department of Industrial Systems Engineering (DISE) |
| Academic Program/FoS | Microelectronics (ME) |
| Chairperson(s) | Dutta, Joydeep; |
| Examination Committee(s) | Ahmed, Kazi Mohiuddin;Afzulpurkar, Nitin V.; |
| Scholarship Donor(s) | Higher Education Commission (HEC), Pakistan;Asian Institute of Technology Fellowship; |
| Degree | Thesis (M.Eng.) - Asian Institute of Technology, 2008 |