| Author | Zia, Zain |
| Note | A thesis submitted in partial fulfillment of the requirements for the
degree of Master of Engineering in
Microelectronics and Embedded Systems |
| Publisher | Asian Institute of Technology |
| Abstract | The study of porous layer fabrication by electrochemical anodization of p-doped silicon in 1:1 hydrofluoric acid: ethanol solutions and potential application as waveguide substrates with zinc oxide coating was studied and evaluated. Refractive index of the porous layer was calculated by application of the Bruggeman Effective Medium Theory. Anodize time, current and potential and anodize solution concentrations were varied to produce layers with variable porosity. Correlation between experimentally determined surface porosity and calculated refractive indices showed that with increased porosity a concomitant decrease in refractive index of the silicon substrate from a maximum of 3.47 (its native value) to 1.66 (the minimal porous layer value achieved) was noted. Increased anodize current, potential and time all contributed to increased porosity (pore size and pore channel depth) of the layer. A layer of zinc oxide nano particle prepared by hydrothermal method was coated on porous silicon to produce an interfacial layer of higher refractive index than that of the porous silicon layer— a conditional requirement for wave guiding capability. In experiments, laser light was shined on the zinc oxide particle layer. In initial experiments, no significant optical guiding effect was noted. More work is required to verify the impact of porous layers on waveguide properties. |
| Year | 2015 |
| Type | Thesis |
| School | School of Engineering and Technology (SET) |
| Department | Department of Industrial Systems Engineering (DISE) |
| Academic Program/FoS | Microelectronics (ME) |
| Chairperson(s) | Mongkol Ekpanyapong; |
| Examination Committee(s) | Hornyak, G. Louis ;Mohammed, Waleed S. ; |
| Scholarship Donor(s) | AIT Fellowship; |