Simulation of multi-electrode semiconductor lasers and amplifiers with and without distributed feedback | |
| Author | Pham Quoc Hop |
| Call Number | AIT Thesis no.TC-03-13 |
| Subject(s) | Semiconductor lasers--Simulation methods Amplifiers (Electronics)--Simulation methods |
| Note | A thesis submitted in partial fulfillment of the requirements for the degree of Master of Engineering |
| Publisher | Asian Institute of Technology |
| Abstract | Radio over Fiber (RoF) is one of key technologies for future generations of mobile communications. In this technique, the optical millimeter wave signal is generated by using millimeter wave data signal to modulate optical signal emitted from light source. Therefore, high performance of coherent light source is required. With the features of narrow spectral width and single mode behavior, distributed feedback (DFB) lasers have been used. However, their performance is degraded by spatial hole burning (SHB) and amplified spontaneous emission (ASE) noise. The effects of SHB and ASE noise on performance of semiconductor lasers and amplifiers are studied in this study. To analyze these effects, two models are used. The first one is a general structural model of multi-electrode DFB laser including all parameters. The second one is a simulation model based on the combination of the rate equation model and the coupled wave equation model; the Transfer Matrix Method (TMM) is used to solve the coupled wave equations under fixed rate equation conditions. From these two models, a simulation program has been done. This simulation program can accommodate the steady-state and dynamic behavior of semiconductor lasers and amplifiers with SHB and ASE noise. The characteristics which can be simulated include optical output power, chirping, local distribution, single longitudinal mode (SLM) stability, spectral width, frequency response and saturation amplifier gain. In this study, from simulation results for these characteristics, the effects of SHB end ASE noise have been investigated in detail at different operating conditions of semiconductor lasers and amplifiers. This program can also simulate many kinds of semiconductor lasers and amplifiers with or without distributed feedback. The effects of structural parameters such as facet reflectivity, corrugation properties are considered. In this study, by changing these parameters appropriately, some semiconductor lasers such as index-coupled DFB lasers, three-electrode DFB lasers, three-section distributed Bragg reflector (DBR) lasers have been simulated and analyzed. A kind of SLA, Fabry-Perot amplifier (FP A) has also been simulated in this study. We find good agreement between simulation and published results. |
| Year | 2003 |
| Type | Thesis |
| School | School of Advanced Technologies (SAT) |
| Department | Department of Information and Communications Technologies (DICT) |
| Academic Program/FoS | Telecommunications (TC) |
| Chairperson(s) | Sharma, A. B. |
| Examination Committee(s) | Ahmed, Kazi M. ;Erke, Tapio |
| Scholarship Donor(s) | Vietnam Ministry of Education and Training |
| Degree | Thesis (M.Eng.) - Asian Institute of Technology, 2003 |