Towards luminescent device using ZnS quantum dots | |
| Author | Bunyarit Hemtanon |
| Call Number | AIT Thesis no.ME-05-02 |
| Subject(s) | Thin films Electroluminescent devices |
| Note | A thesis submitted in partial fulfillment of the requirements for the degree of Master of Engineering, School of Advanced Technologies |
| Publisher | Asian Institute of Technology |
| Series Statement | Thesis ; no. ME-05-02 |
| Abstract | Thin film electroluminescence (TFEL) is a technology that has been in the market for more than 40 years. This display technology renders a high brightness, good contrast and is rugged and also has a good viewing angle to the flat panel displays. A metal for the deposition of colloidal nanoparticles by 'layer by layer' method has been developed utilizing the free charges of polymers that were used to cap the nanoparticles (steric hindrance). The film obtained by this process showed the uniformity and smooth surface with maximum surface roughness of ±2.5 nm. This modified polyelectrolyte deposition was used to construct metal-semiconductor type diode that show near-ideal current-voltage characteristics as well as diode-like response to the applied frequency. |
| Year | 2005 |
| Corresponding Series Added Entry | Asian Institute of Technology. Thesis ; no. ME-05-02 |
| Type | Thesis |
| School | School of Advanced Technologies (SAT) |
| Department | Department of Industrial Systems Engineering (DISE) |
| Academic Program/FoS | Microelectronics (ME) |
| Chairperson(s) | Dutta, Joydeep; |
| Examination Committee(s) | Chanchana Thanachayanont ;Pisut Koomsap ; |
| Scholarship Donor(s) | Thailand Graduate Institute of Science and Technology ;Asian Institute of Technology Fellowship ; |
| Degree | Thesis (M.Eng.) - Asian Institute of Technology, 2005 |