Quantum tunneling based electronic pressure sensors using nanotechnology | |
| Author | Jafri, Syed Hassan Mujtaba |
| Call Number | AIT Thesis no.ME-06-02 |
| Subject(s) | Nanotechnology Tunneling Nanoparticles |
| Note | A thesis submitted to partial fulfillment of the requirements for the degree of Master of Engineering, School of Engineering and Technology |
| Publisher | Asian Institute of Technology |
| Series Statement | Thesis ; no. ME-06-02 |
| Abstract | Fabrication strategies that rely on mechanisms of self-assembly are now widely being recognized as inevitable tools in nanotechnology. Self-organized construction of advanced materials and devices has been carried out starting with tailor made colloidal nanoparticles as building blocks. Multilayer thin films of gold, zinc sulphide and manganese doped zinc sulfide nanoparticles have been fabricated by a modified polyelectrolyte deposition process. The inherent necessity to introduce electrostatic or steric hindrance to avoid colloidal agglomeration has been utilized to induce self-assembly of multilayers applying similar concepts used for the layering of polyelectrolytes. The layer-by-layer depositions of multilayers of several different structures were prepared and devices showing resistive and capacitive electrical characteristics have been fabricated. Devices (greater than 50 Layers) exhibited characteristics which initially block the current with applied voltage followed by a conduction of electrons, the onset of which depended on the thickness of the multilayer stack. Devices exhibit similar behavior in forward and reverse biases and the electrical characteristics were repeatable. The devices recovered to their initial state after discharging the accumulated charges in the capacitative multilayer. Moisture or water contents affect the conduction as well as discharging of device which could be removed by annealing the devices for 1 hour at 100°C prior to measuring the current-voltage characteristics. The device characteristic linearly varies with increasing temperature. The onset level voltage decreases linearly with the applied pressure, demonstrating the application of the multilayer device for pressure sensing |
| Year | 2006 |
| Corresponding Series Added Entry | Asian Institute of Technology. Thesis ; no. ME-06-02 |
| Type | Thesis |
| School | School of Engineering and Technology (SET) |
| Department | Department of Industrial Systems Engineering (DISE) |
| Academic Program/FoS | Microelectronics (ME) |
| Chairperson(s) | Dutta, Joydeep; |
| Examination Committee(s) | Sharma, A.B.;Chanchana Thanachayanont; |
| Scholarship Donor(s) | Asian Institute of Technology Fellowship;Higher Education Commission, Pakistan; |
| Degree | Thesis (M.Eng.) - Asian Institute of Technology, 2006 |